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| PROCESS Low Leakage Diode Picoampere Diode Chip CPD65 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 9.5 X 9.5 MILS 7.5 MILS 2.5 MILS DIAMETER Al - 30,000A Au - 13,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 125,200 PRINCIPAL DEVICE TYPES BAV45 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CPD65 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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